BUK653R7-30C,127
MOSFET N-CH 30V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK653R7-30C-127 is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 3.9mOhm at 25A and 10V Vgs, facilitating minimal conduction losses. The BUK653R7-30C-127 boasts a continuous drain current capability of 100A at 25°C (Tc) and a maximum power dissipation of 158W (Tc), suitable for demanding thermal environments. Its robust TO-220AB through-hole package ensures secure mounting and effective heat management. Key electrical parameters include Vgs(th) of 2.8V at 1mA, a gate charge of 78 nC at 10V, and input capacitance (Ciss) of 4707 pF at 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4707 pF @ 25 V |
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