BUK653R5-55C,127
MOSFET N-CH 55V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK653R5-55C-127, offers a 55V drain-to-source voltage and a continuous drain current of 120A (Tc) at 25°C. This component features a low on-resistance of 3.9mOhm maximum at 25A and 10V gate-to-source voltage. The device is housed in a TO-220AB package, suitable for through-hole mounting. Maximum power dissipation is rated at 263W (Tc). Key electrical characteristics include a gate charge of 191nC (max) at 10V and input capacitance of 11516pF (max) at 25V. The operating junction temperature range is -55°C to 175°C. This device finds application in industrial power supplies and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 191 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11516 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
