BUK653R2-55C,127
MOSFET N-CH 55V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK653R2-55C-127 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 306W at the same temperature. The device exhibits a low on-resistance (Rds On) of 3.2mOhm at 25A and 10V, facilitated by its TrenchMOS technology. Gate drive voltages range from 4.5V to 10V. With a gate charge (Qg) of 258 nC at 10V and input capacitance (Ciss) of 15300 pF at 25V, it offers efficient switching characteristics. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220AB package suitable for through-hole mounting. This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15300 pF @ 25 V |
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