BUK652R7-30C,127
MOSFET N-CH 30V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK652R7-30C-127 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 204W (Tc). The low on-resistance (Rds On) of 3.3mOhm at 25A and 10V gate drive ensures efficient power transfer. Key characteristics include a gate charge (Qg) of 114 nC at 10V and input capacitance (Ciss) of 6960 pF at 25V. Operating within a wide temperature range of -55°C to 175°C (TJ), this TO-220AB packaged device is suitable for through-hole mounting. The BUK652R7-30C-127 is commonly utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 204W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6960 pF @ 25 V |
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