BUK652R3-40C,127
MOSFET N-CH 40V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK652R3-40C-127, is a high-performance power MOSFET designed for demanding applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 120A at 25°C. The low on-resistance of 2.3mOhm at 25A and 10V gate-source drive makes it suitable for efficient power switching. With a maximum power dissipation of 306W and an operating temperature range of -55°C to 175°C, it ensures robust performance in challenging environments. Key parameters include a gate charge of 260 nC at 10V and input capacitance of 15100 pF at 25V. The TO-220AB through-hole package facilitates easy integration into various circuit designs. This device finds application in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 25 V |
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