BUK652R1-30C,127
MOSFET N-CH 30V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK652R1-30C-127 is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a Vds of 30V and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 263W at the same temperature. The low on-resistance, specified at a maximum of 2.4mOhm at 25A and 10V Vgs, minimizes conduction losses. Key parameters include a gate charge (Qg) of 168nC at 10V and input capacitance (Ciss) of 10918pF at 25V. It operates within a temperature range of -55°C to 175°C and is housed in a TO-220AB package suitable for through-hole mounting. This device finds application in power management, automotive systems, and industrial motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10918 pF @ 25 V |
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