BUK652R0-30C,127
MOSFET N-CH 30V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK652R0-30C-127. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C case temperature, with a maximum power dissipation of 306W. The device exhibits a low on-resistance of 2.2mOhm at 25A and 10V Vgs. With a gate charge of 229 nC at 10V Vgs, it is designed for efficient switching. The TO-220AB package with through-hole mounting is suitable for applications requiring robust thermal management. Typical applications include power switching in automotive systems and industrial motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V |
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