BUK6510-75C,127
MOSFET N-CH 75V 77A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ MOSFET, part number BUK6510-75C-127, is a high-performance N-Channel power MOSFET designed for demanding applications. Featuring a Drain-Source voltage (Vdss) of 75 V and a continuous drain current (Id) of 77 A at 25°C (Tc), this component offers a low on-resistance of 10.4 mOhm at 25 A and 10 V (Vgs). Its robust construction, with a maximum power dissipation of 158 W (Tc) and an extended operating temperature range of -55°C to 175°C (TJ), makes it suitable for use in automotive, industrial power control, and high-power switching circuits. The device is housed in a standard TO-220AB package, facilitating through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 81 nC at 10 V and input capacitance (Ciss) of 5251 pF at 25 V.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5251 pF @ 25 V |
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