BUK6507-55C,127
MOSFET N-CH 55V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK6507-55C-127, offers a 55V drain-source voltage rating and 100A continuous drain current at 25°C (Tc). This device, packaged in a TO-220AB through-hole configuration, features a low on-resistance of 7mOhm maximum at 25A and 10V. Key specifications include a maximum power dissipation of 158W (Tc), a gate charge of 82nC at 10V, and input capacitance of 5160pF at 25V. The BUK6507-55C-127 operates across a wide temperature range of -55°C to 175°C. This component is suitable for applications in automotive, industrial power control, and high-power switching systems.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5160 pF @ 25 V |
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