BUK624R5-30C,118
PFET, 90A I(D), 30V, 0.0075OHM,Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK624R5-30C-118 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This AEC-Q101 qualified component features a 30V drain-source breakdown voltage and supports a continuous drain current of 90A at 25°C (Tc) with a maximum power dissipation of 158W (Tc). The device exhibits a low on-resistance of 4.5mOhm at 25A and 10V, with a typical gate charge of 78 nC at 10V. It is housed in a TO-252-3, DPAK (SC-63) surface-mount package, suitable for demanding thermal management. This MOSFET is engineered for robust performance in automotive and industrial power control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4707 pF @ 25 V |
| Qualification | AEC-Q101 |