BUK6240-75C,118
MOSFET N-CH 75V 22A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK6240-75C-118 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 22 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 46 mOhm maximum at 10 A and 10 V, with a threshold voltage (Vgs(th)) of 2.8 V maximum at 1 mA. Optimized for efficiency, it offers a gate charge (Qg) of 21.4 nC maximum at 10 V and input capacitance (Ciss) of 1280 pF maximum at 25 V. The BUK6240-75C-118 is housed in a surface-mount DPAK (TO-252-3, DPAK) package, allowing for efficient thermal management with a maximum power dissipation of 60 W (Tc). Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |