BUK6208-40C,118
MOSFET N-CH 40V 90A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ series N-Channel MOSFET, part number BUK6208-40C-118. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The BUK6208-40C-118 offers a low on-resistance of 6.2mOhm maximum at 15A and 10V Vgs, with a gate charge (Qg) of 67 nC maximum at 10V. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, rated for a maximum power dissipation of 128W (Tc). The operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
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