BST72A,112
MOSFET N-CH 100V 190MA TO92-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BST72A-112 is a high-performance N-Channel power MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 190mA at 25°C. The BST72A-112 offers a low on-resistance of 10 Ohms maximum at 150mA and 5V gate-source drive voltage, with a Vgs(th) of 3.5V maximum. Its TO-92-3 package with formed leads is suitable for through-hole mounting. With a maximum power dissipation of 830mW and an operating junction temperature of 150°C, this MOSFET is well-suited for power management in consumer electronics, industrial automation, and automotive systems. Input capacitance (Ciss) is a maximum of 40pF at 10V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 150mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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