BSS84AKW-B115
MOSFET P-CHManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. BSS84AKW-B115 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous drain current (Id) rating of 150mA at 25°C ambient. The Rds On is specified as a maximum of 7.5 Ohms at 100mA and 10V gate-source voltage. With a maximum power dissipation of 260mW (Ta) and 830mW (Tc), this MOSFET is suitable for automotive applications, meeting AEC-Q101 qualification standards. The SC-70 package (SOT-323 equivalent) houses this Metal Oxide technology device, with a gate charge of 0.35 nC at 5V and input capacitance of 36 pF at 25V. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260mW (Ta), 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | SC-70 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 25 V |
| Qualification | AEC-Q101 |
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