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BSS84AKT,115

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BSS84AKT,115

MOSFET P-CH 50V 150MA SC75

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BSS84AKT-115 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current of 150mA at 25°C. The Rds On is specified at a maximum of 7.5 Ohms when driven at 100mA and 10V. Key electrical characteristics include a maximum input capacitance (Ciss) of 36 pF at 25V and a gate charge (Qg) of 0.35 nC at 5V. Power dissipation is rated at 250mW (Ta) and 770mW (Tc). The device operates across a temperature range of -55°C to 150°C. The SC-75 (SOT-416) package is supplied on tape and reel. This MOSFET is utilized in various industrial and consumer electronics applications requiring efficient switching and signal level control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Rds On (Max) @ Id, Vgs7.5Ohm @ 100mA, 10V
FET Feature-
Power Dissipation (Max)250mW (Ta), 770mW (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackageSC-75
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 25 V

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