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BSP254A,126

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BSP254A,126

MOSFET P-CH 250V 200MA TO92-3

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BSP254A-126 is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 200mA at 25°C. With a maximum power dissipation of 1W (Ta) and a package suitable for through-hole mounting (TO-92-3), it offers robust performance in a compact form factor. The Rds On is specified at 15 Ohms maximum at 200mA and 10V gate drive. Key parameters include an input capacitance (Ciss) of 90pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2.8V at 1mA. The maximum operating junction temperature (TJ) is 150°C. This component is commonly utilized in industrial automation, consumer electronics, and power management systems. The packaging is Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs15Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageTO-92-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 25 V

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