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BSN304,126

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BSN304,126

MOSFET N-CH 300V 300MA TO92-3

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BSN304-126 is an N-Channel MOSFET designed for applications requiring high voltage breakdown and moderate current handling. This component features a Drain-Source Voltage (Vdss) of 300 V and a continuous Drain Current (Id) of 300 mA at 25°C. The device offers a maximum On-Resistance (Rds On) of 6 Ohms at 250 mA and 10 V, with a Gate-Source Threshold Voltage (Vgs(th)) of 2 V at 1 mA. Input capacitance (Ciss) is specified at a maximum of 120 pF at 25 V. Operating across a temperature range of -55°C to 150°C, the BSN304-126 is housed in a standard TO-92-3 (TO-226-3) package, suitable for through-hole mounting. Power dissipation is rated at 1W (Ta). This component finds utility in various industrial and consumer electronics segments. It is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-92-3
Drive Voltage (Max Rds On, Min Rds On)2.4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)300 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V

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