BSN254,126
MOSFET N-CH 250V 310MA TO92-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. MOSFET N-CH BSN254-126 is a single N-channel MOSFET designed for through-hole mounting in a TO-92-3 package. This component features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 310mA at 25°C (Ta), with a maximum power dissipation of 1W (Ta). The Rds On is specified as a maximum of 5 Ohm at 300mA and 10V gate-source voltage. Key parameters include an input capacitance (Ciss) of 120 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This device is typically utilized in industrial automation and consumer electronics applications. The BSN254-126 is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
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