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BSH207,135

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BSH207,135

MOSFET P-CH 12V 1.52A 6TSOP

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BSH207-135 is a P-Channel MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 1.52A at 25°C (Ta). With a maximum power dissipation of 417mW (Ta), it offers an Rds On of 120mOhm at 1A and 4.5V. The gate charge (Qg) is specified at 8.8 nC maximum at 4.5V, and input capacitance (Ciss) is a maximum of 500pF at 9.6V. Operating temperature ranges from -55°C to 150°C (TJ). The BSH207-135 is housed in a 6-TSOP package, also known as SC-74 or SOT-457. This component is commonly utilized in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.52A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)417mW (Ta)
Vgs(th) (Max) @ Id600mV @ 1mA (Typ)
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 9.6 V

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