BSH205,215
MOSFET P-CH 12V 750MA TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. BSH205-215 is a P-Channel MOSFET in a SOT-23 (TO-236AB) package. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 750mA at 25°C. The specified on-resistance (Rds On) is 400mOhm at 430mA and 4.5V gate-source voltage. It operates with a gate-source voltage range up to ±8V and a threshold voltage (Vgs(th)) of 680mV typically at 1mA. Key parameters include a maximum power dissipation of 417mW (Ta), input capacitance (Ciss) of 200pF maximum at 9.6V, and gate charge (Qg) of 3.8nC maximum at 4.5V. The BSH205-215 is suitable for various applications including power management and switching circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 430mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 417mW (Ta) |
| Vgs(th) (Max) @ Id | 680mV @ 1mA (Typ) |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 9.6 V |
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