BSH112,235
MOSFET N-CH 60V 300MA TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BSH112-235 is a surface-mount N-channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 300mA at 25°C (Ta). The Rds On is specified at a maximum of 5 Ohms when driven by 10V (Vgs) at 500mA (Id). With a maximum power dissipation of 830mW (Tc), it is housed in a standard SOT-23 (TO-236AB) package, supplied on tape and reel. Key electrical characteristics include an input capacitance (Ciss) of 40pF at 10V (Vds) and a gate threshold voltage (Vgs(th)) of 2V at 1mA. Operating temperature range is -65°C to 150°C (TJ). This device is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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