The NXP USA Inc. BSH111-215 is a general-purpose N-channel MOSFET packaged in a SOT-23. This device features a drain-source breakdown voltage of 55V and a continuous drain current capability of 335mA. Its low on-resistance and compact form factor make it suitable for various switching and amplification applications across industrial, automotive, and consumer electronics sectors. The BSH111-215 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Bulk