BS108,126
MOSFET N-CH 200V 300MA TO92-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. BS108-126 is an N-Channel MOSFET designed for general-purpose switching applications. This through-hole component features a drain-source breakdown voltage of 200V and a continuous drain current of 300mA at 25°C ambient. The BS108-126 offers a maximum on-resistance (Rds On) of 5 Ohms at 100mA drain current and 2.8V gate-source voltage. Key parameters include a maximum continuous drain current of 300mA (Ta) and a power dissipation of 1W (Ta). The device operates within a temperature range of -55°C to 150°C and is supplied in a TO-92-3 package, available in Tape & Box packaging. This MOSFET is commonly utilized in industrial, consumer electronics, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 2.8V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
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