2N7002T,215
MOSFET N-CH 60V 300MA TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the 2N7002T-215, an N-Channel MOSFET featuring a Drain-Source Voltage (Vdss) of 60 V. This component offers a continuous drain current (Id) of 300mA at 25°C with a maximum power dissipation of 830mW (Ta). The On-Resistance (Rds On) is specified at 5 Ohms maximum for 500mA drain current and 10V gate-source voltage. It operates with drive voltages ranging from 5V to 10V and has a gate-source threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. Input capacitance (Ciss) is a maximum of 40 pF at 10V. The 2N7002T-215 is housed in a SOT-23 (TO-236AB) surface-mount package, supplied on tape and reel. This device is suitable for applications in industrial automation, consumer electronics, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |