2N7002PT,115

MOSFET N-CH 60V 310MA SC75

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NXP USA Inc. N-Channel MOSFET, part number 2N7002PT-115, offers a 60V drain-source breakdown voltage and a continuous drain current of 310mA at 25°C. This device features a low on-resistance of 1.6 Ohm maximum at 500mA and 10V Vgs, with a gate charge of 0.8 nC maximum at 4.5V Vgs. The input capacitance (Ciss) is 50 pF maximum at 10V Vds. Designed for surface mounting, it is supplied in an SC-75 (SOT-416) package, presented in a Tape & Reel (TR) configuration. The component has a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C. This MOSFET is suitable for applications in industrial and consumer electronics where efficient switching and low power consumption are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	SC-75, SOT-416
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	310mA (Ta)
Rds On (Max) @ Id, Vgs	1.6Ohm @ 500mA, 10V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	SC-75
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 10 V