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2N7002K,215

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2N7002K,215

MOSFET N-CH 60V 340MA TO236AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number 2N7002K-215, is a surface mount device in a TO-236AB (SOT-23) package. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 340 mA at 25°C. The Rds On is specified at a maximum of 3.9 Ohms at 500 mA and 10 V, with gate-source voltage (Vgs) thresholds as low as 2 V. It offers a maximum power dissipation of 830 mW. The operating temperature range is -65°C to 150°C. This MOSFET is suitable for applications in consumer electronics, industrial control, and automotive systems requiring efficient switching and signal amplification.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C340mA (Ta)
Rds On (Max) @ Id, Vgs3.9Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)830mW (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V

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