2N7002K,215
MOSFET N-CH 60V 340MA TO236ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number 2N7002K-215, is a surface mount device in a TO-236AB (SOT-23) package. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 340 mA at 25°C. The Rds On is specified at a maximum of 3.9 Ohms at 500 mA and 10 V, with gate-source voltage (Vgs) thresholds as low as 2 V. It offers a maximum power dissipation of 830 mW. The operating temperature range is -65°C to 150°C. This MOSFET is suitable for applications in consumer electronics, industrial control, and automotive systems requiring efficient switching and signal amplification.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.9Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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