2N7002BKT,115
MOSFET N-CH 60V 290MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. 2N7002BKT-115 is an N-Channel MOSFET designed for surface mount applications in an SC-75 package. This component features a Drain-to-Source Voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 290mA at 25°C, with a maximum power dissipation of 260mW (Ta). The Rds On is specified at a maximum of 1.6 Ohms when Id is 500mA and Vgs is 10V. Gate charge (Qg) is a maximum of 0.6 nC at 4.5V, and input capacitance (Ciss) is a maximum of 50pF at 10V. Operating temperature ranges up to 150°C (TJ). This technology is suitable for industrial, automotive, and consumer electronics applications requiring efficient switching and control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 290mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | SC-75 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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