2N7000,126
MOSFET N-CH 60V 300MA TO92-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number 2N7000-126, features a 60V drain-to-source voltage and a continuous drain current of 300mA at 25°C. This through-hole component is housed in a TO-92-3 package. Key specifications include a maximum power dissipation of 830mW (Ta) and a low on-resistance (Rds On) of 5 Ohms at 500mA and 10V gate-source voltage. Input capacitance (Ciss) is rated at a maximum of 40pF at 10V. Operating temperature ranges from -55°C to 150°C. This device is suitable for applications in industrial and consumer electronics. The 2N7000-126 is supplied in Tape & Box packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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