PMEG2010BEV,115
DIODE SCHOTTKY 20V 1A SOT666Manufacturer: NXP USA Inc.
Categories: Single Diodes
Quality Control: Learn More
NXP USA Inc. presents the PMEG2010BEV-115, a Schottky diode designed for demanding applications. This component offers a maximum DC reverse voltage of 20 V and a peak forward surge current capability of 1 A. Its low forward voltage drop of 500 mV at 1 A and a typical reverse leakage current of 200 µA at 20 V ensure efficient operation. The PMEG2010BEV-115 features a junction capacitance of 80 pF at 1 V and 1 MHz. Packaged in a compact SOT-666 (SOT-563) surface-mount case, it operates across a junction temperature range of -40°C to 150°C. This diode is suitable for use in automotive, industrial, and consumer electronics sectors requiring high-speed switching and low power loss.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 80pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | SOT-666 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 20 V |
Request a Quote
Clients Also Buy
BYD17J,115
DIODE AVALANCHE 600V 1.5A MELF
BAS116T,115
DIODE GEN PURP 75V 215MA SC75
BYC8B-600PQP
DIODE GEN PURP 600V 8A D2PAK
