BYD77B,115
DIODE AVALANCHE 100V 850MA MELFManufacturer: NXP USA Inc.
Categories: Single Diodes
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NXP USA Inc. BYD77B-115 is a high-performance avalanche diode designed for demanding applications. This MELF package device offers a reverse voltage (Vr) of up to 100V and an average rectified current (Io) of 850mA. Featuring fast recovery characteristics with a trr of 25 ns, it is suitable for power supply rectification and general-purpose switching. The diode exhibits a low forward voltage (Vf) of 980mV at 1A and a reverse leakage current of just 1 µA at its maximum reverse voltage. With a junction operating temperature range of -65°C to 175°C and a capacitance of 50pF at 0V and 1MHz, the BYD77B-115 is a robust component utilized in industrial, automotive, and telecommunications sectors. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-87 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Avalanche |
| Capacitance @ Vr, F | 50pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 850mA |
| Supplier Device Package | MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 980 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
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