BAW62,113
DIODE GEN PURP 75V 250MA ALF2Manufacturer: NXP USA Inc.
Categories: Single Diodes
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NXP USA Inc. presents the BAW62-113, a general-purpose diode designed for demanding applications. This through-hole component, housed in a DO-204AH, DO-35, Axial package (ALF2), offers a reverse voltage rating of up to 75V and a continuous forward current handling capability of 250mA. The BAW62-113 features a fast recovery time of 4 ns, ensuring efficient switching performance. Its low forward voltage drop of 1V at 100mA and minimal reverse leakage current of 5 µA at 75V contribute to reduced power dissipation. With a maximum junction operating temperature of 200°C and a capacitance of 2pF at 0V, 1MHz, this diode is suitable for use in automotive, industrial, and consumer electronics sectors. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | ALF2 |
| Operating Temperature - Junction | 200°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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