BAS216,135
DIODE GEN PURP 75V 250MA SOD110Manufacturer: NXP USA Inc.
Categories: Single Diodes
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NXP USA Inc. BAS216-135 is a general-purpose diode designed for efficient rectification. This device features a maximum repetitive peak reverse voltage (Vrrm) of 75V and a continuous average rectified forward current (Io) of 250mA. Its fast recovery time (trr) of 4ns, coupled with a forward voltage drop (Vf) of 1.25V at 150mA, makes it suitable for high-frequency switching applications. The leakage current at the maximum reverse voltage is a mere 1 µA at 75V. Housed in a compact SOD-110 surface-mount package, the BAS216-135 offers a low capacitance of 1.5pF at 0V and 1MHz. The device operates across a wide temperature range, with a maximum junction temperature of 150°C. This component is commonly utilized in power supply circuits, signal coupling, and general-purpose switching applications across various industrial and consumer electronics sectors. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-110 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | SOD-110 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |
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