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BAS16T,115

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BAS16T,115

DIODE GEN PURP 100V 155MA SC75

Manufacturer: NXP USA Inc.

Categories: Single Diodes

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NXP USA Inc. presents the BAS16T-115, a general-purpose small signal diode. This component features a maximum reverse voltage of 100V and an average rectified forward current capability of 155mA. The forward voltage drop is specified at 1.25V maximum at 150mA. With a reverse leakage current of 500 nA at 80V and a fast reverse recovery time of 4 ns, the BAS16T-115 is suitable for high-speed switching applications. Capacitance at 0V and 1MHz is 1.5pF. The diode operates within a junction temperature range of -55°C to 150°C. It is housed in an SC-75 (SOT-416) surface mount package and supplied on tape and reel. This diode finds application in various industries including telecommunications, industrial control, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
SpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)4 ns
TechnologyStandard
Capacitance @ Vr, F1.5pF @ 0V, 1MHz
Current - Average Rectified (Io)155mA
Supplier Device PackageSC-75
Operating Temperature - Junction150°C (Max)
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
Current - Reverse Leakage @ Vr500 nA @ 80 V

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