BAS16T,115
DIODE GEN PURP 100V 155MA SC75Manufacturer: NXP USA Inc.
Categories: Single Diodes
Quality Control: Learn More
NXP USA Inc. presents the BAS16T-115, a general-purpose small signal diode. This component features a maximum reverse voltage of 100V and an average rectified forward current capability of 155mA. The forward voltage drop is specified at 1.25V maximum at 150mA. With a reverse leakage current of 500 nA at 80V and a fast reverse recovery time of 4 ns, the BAS16T-115 is suitable for high-speed switching applications. Capacitance at 0V and 1MHz is 1.5pF. The diode operates within a junction temperature range of -55°C to 150°C. It is housed in an SC-75 (SOT-416) surface mount package and supplied on tape and reel. This diode finds application in various industries including telecommunications, industrial control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 155mA |
| Supplier Device Package | SC-75 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
Request a Quote
Clients Also Buy
BAT54/LF1R
DIODE SCHOTTKY TO-236AB
BYD17J,115
DIODE AVALANCHE 600V 1.5A MELF
BAS116T,115
DIODE GEN PURP 75V 215MA SC75
