BAS116T,115
DIODE GEN PURP 75V 215MA SC75Manufacturer: NXP USA Inc.
Categories: Single Diodes
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NXP USA Inc. BAS116T-115 is a general-purpose diode engineered for demanding applications. Featuring a 75V reverse voltage rating and a 215mA average rectified current capacity, this component is housed in a compact SC-75 (SOT-416) surface-mount package. Its low reverse leakage current of 5nA at 75V and a forward voltage drop of 1.25V at 150mA highlight its efficiency. With a capacitance of 2pF at 0V and 1MHz, and a reverse recovery time of 3µs, the BAS116T-115 is suitable for various switching scenarios. The device operates across a junction temperature range up to 150°C and is supplied on tape and reel. This diode is commonly utilized in automotive, industrial, and consumer electronics for rectification and switching functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 215mA |
| Supplier Device Package | SC-75 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 5 nA @ 75 V |
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