1PS193,135
DIODE GP 80V 215MA SMT3 MPAKManufacturer: NXP USA Inc.
Categories: Single Diodes
Quality Control: Learn More
NXP USA Inc. offers the 1PS193-135, a general-purpose diode designed for surface mount applications. This component features a maximum DC reverse voltage (Vr) of 80V and an average rectified forward current (Io) of 215mA. With a forward voltage (Vf) of 1.2V at 100mA and a reverse leakage current of 500 nA at 80V, the 1PS193-135 exhibits a fast reverse recovery time (trr) of 4 ns, classifying it as a fast recovery diode. Its capacitance at 0V and 1MHz is 1.5pF. The device operates within a junction temperature range of 150°C (Max) and is supplied in an SMT3 MPAK package, presented on tape and reel. This diode is suitable for use in various electronic systems, including telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 215mA |
| Supplier Device Package | SMT3; MPAK |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
Request a Quote
Clients Also Buy
BAT54/LF1R
DIODE SCHOTTKY TO-236AB
BYD17J,115
DIODE AVALANCHE 600V 1.5A MELF
BAS116T,115
DIODE GEN PURP 75V 215MA SC75
