1N914B,113
DIODE GEN PURP 100V 200MA ALF2Manufacturer: NXP USA Inc.
Categories: Single Diodes
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NXP USA Inc. offers the 1N914B-113, a general-purpose silicon diode designed for high-speed switching applications. This component features a reverse voltage rating of 100V and an average rectified current capability of 200mA. Its low leakage current is rated at 5 µA at 75V reverse bias. The diode exhibits a forward voltage drop of 1V maximum at 100mA and a fast reverse recovery time of 4 ns. With a junction operating temperature up to 175°C, it is suitable for a variety of industrial and commercial electronics, including power supplies, signal processing, and consumer electronics. The 1N914B-113 is supplied in a DO-204AH, DO-35, Axial package, presented in Tape & Reel (TR) packaging. Its capacitance at 0V and 1MHz is 4pF, further indicating its suitability for signal path integration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | ALF2 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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