1N4448,113
DIODE GEN PURP 100V 200MA ALF2Manufacturer: NXP USA Inc.
Categories: Single Diodes
Quality Control: Learn More
NXP USA Inc. 1N4448-113 is a general-purpose diode designed for high-speed switching applications. This axial leaded component, housed in a DO-204AH (DO-35) package, offers a maximum DC reverse voltage of 100V and a forward voltage drop of 1V at 100mA. Its average rectified forward current is 200mA, with a low reverse leakage of 25nA at 20V. Featuring a reverse recovery time of 4ns, it is suitable for signal processing and switching circuits. The diode exhibits a junction capacitance of 4pF at 0V and 1MHz. This component is commonly utilized in industrial automation, medical devices, and telecommunications infrastructure. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | ALF2 |
| Operating Temperature - Junction | 200°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 25 nA @ 20 V |
Request a Quote
Clients Also Buy
BYD17J,115
DIODE AVALANCHE 600V 1.5A MELF
BAS116T,115
DIODE GEN PURP 75V 215MA SC75
BYC8B-600PQP
DIODE GEN PURP 600V 8A D2PAK
