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1N4448,113

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1N4448,113

DIODE GEN PURP 100V 200MA ALF2

Manufacturer: NXP USA Inc.

Categories: Single Diodes

Quality Control: Learn More

NXP USA Inc. 1N4448-113 is a general-purpose diode designed for high-speed switching applications. This axial leaded component, housed in a DO-204AH (DO-35) package, offers a maximum DC reverse voltage of 100V and a forward voltage drop of 1V at 100mA. Its average rectified forward current is 200mA, with a low reverse leakage of 25nA at 20V. Featuring a reverse recovery time of 4ns, it is suitable for signal processing and switching circuits. The diode exhibits a junction capacitance of 4pF at 0V and 1MHz. This component is commonly utilized in industrial automation, medical devices, and telecommunications infrastructure. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-204AH, DO-35, Axial
Mounting TypeThrough Hole
SpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)4 ns
TechnologyStandard
Capacitance @ Vr, F4pF @ 0V, 1MHz
Current - Average Rectified (Io)200mA
Supplier Device PackageALF2
Operating Temperature - Junction200°C (Max)
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1 V @ 100 mA
Current - Reverse Leakage @ Vr25 nA @ 20 V

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