PVR100AZ-B3V0,115
TRANS NPN 45V 0.1A SC73Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PVR100AZ-B3V0-115 is an NPN bipolar junction transistor (BJT) with an integrated Zener diode. This device features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. The minimum DC current gain (hFE) is specified as 160 at 100mA collector current and 1V collector-emitter voltage. The transistor offers a maximum power dissipation of 550mW. It is housed in a compact SC-73 package, also known as TO-261-4 or TO-261AA, suitable for surface mounting. The operating junction temperature range extends to 150°C. This component is commonly utilized in general-purpose amplification and switching applications across various industries, including consumer electronics and industrial control systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Zener |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SC-73 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 550 mW |
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