PVR100AZ-B2V5,115
TRANS NPN 45V 0.1A SC73Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. Bipolar Junction Transistor (BJT) NPN PVR100AZ-B2V5-115. This component integrates an NPN transistor with a Zener diode, offering a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a minimum DC current gain (hFE) of 160 at 100mA and 1V. The device is rated for a maximum power dissipation of 550mW and operates at temperatures up to 150°C (TJ). Packaged in a compact SC-73 (TO-261-4, TO-261AA) surface mount configuration, it is supplied on tape and reel. This transistor is commonly utilized in industrial and automotive applications requiring voltage regulation and switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Zener |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SC-73 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 550 mW |
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