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PN2907A,116

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PN2907A,116

TRANS PNP 60V 0.6A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PN2907A-116 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. The PN2907A-116 offers a transition frequency of 200MHz and a maximum power dissipation of 500mW. DC current gain (hFE) is specified at a minimum of 100 at 150mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 1.6V at 50mA base current and 500mA collector current. The transistor is housed in a TO-92-3 package with formed leads, suitable for through-hole mounting. It operates at junction temperatures up to 150°C. Typical applications include power switching, linear amplification, and general electronic circuitry across various industrial sectors. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW

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