PN2369A,126
TRANS NPN 15V 0.2A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PN2369A-126 is a Bipolar Junction Transistor (BJT) with an NPN configuration. This component offers a collector-emitter breakdown voltage of 15V and a maximum continuous collector current of 200mA. The device features a transition frequency of 500MHz and a maximum power dissipation of 500mW. It is supplied in a TO-92-3 package with through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 350mV collector-emitter voltage, and a saturation voltage (Vce(sat)) of 500mV at 10mA base current and 100mA collector current. The operating junction temperature range extends to 150°C. This transistor is suitable for applications in industrial and consumer electronics. It is packaged in Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 350mV |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
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