PN2222A,412
TRANS NPN 40V 0.6A TO92Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. presents the PN2222A-412, a general-purpose NPN bipolar junction transistor. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 500mW, it is suitable for a range of applications. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 1V at 50mA base current and 500mA collector current. The PN2222A-412 is supplied in a TO-92-3 package for through-hole mounting. Its specifications lend themselves to use in consumer electronics, industrial control systems, and general amplification circuits. The device operates at temperatures up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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