PN2222A,126
TRANS NPN 40V 0.6A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PN2222A-126 is a through-hole NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is rated for a collector-emitter breakdown voltage of 40V and a continuous collector current (Ic) of up to 600mA. Featuring a transition frequency of 300MHz and a maximum power dissipation of 500mW, it offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. The device exhibits a Vce(sat) of 1V at 50mA and 500mA, with a collector cutoff current (ICBO) of 10nA. Operating temperature range extends to 150°C (TJ). This transistor is commonly employed in general-purpose amplification and switching applications across industrial and consumer electronics sectors. The component is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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