PMST5401,115
TRANS PNP 150V 0.3A SC70Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. PMST5401-115 is a PNP bipolar junction transistor designed for surface mount applications within the SC-70 package. This device features a maximum collector current (Ic) of 300 mA and a collector-emitter breakdown voltage (Vce(max)) of 150 V. It offers a transition frequency (fT) of 300 MHz and a maximum power dissipation of 200 mW. The minimum DC current gain (hFE) is specified as 60 at 10 mA and 5 V. Collector cutoff current (ICBO) is rated at a maximum of 50 nA. The Vce(sat) is at most 500 mV at 5 mA base current and 50 mA collector current. This component is suitable for use in general-purpose amplification and switching applications across various industrial sectors. The packaging is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 200 mW |
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