PMEM4030PS,115
TRANS PNP 50V 2A 8SOManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PMEM4030PS-115, a PNP bipolar junction transistor (BJT) with an integrated isolated diode, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 2A. This device features a transition frequency of 100MHz and a maximum power dissipation of 1W. Designed for surface mount applications, it is supplied in an 8-SOIC package, specifically the 8-SO (0.154", 3.90mm Width) variant, on tape and reel. The transistor exhibits a minimum DC current gain (hFE) of 200 at 1A and 2V, with a Vce(sat) of 390mV at 300mA and 3A. The collector cutoff current (ICBO) is a maximum of 100nA. This component is suitable for applications in industrial and automotive sectors requiring robust power switching and signal amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 390mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 8-SO |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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