PMEM4030NS,115
TRANS NPN 50V 2A 8SOManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. PMEM4030NS-115 is an NPN bipolar junction transistor with an integrated isolated diode. This device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current (Ic) of 2A. The DC current gain (hFE) is specified at a minimum of 200 at 1A and 2V. The transistor exhibits a transition frequency (fT) of 100MHz. It has a maximum power dissipation of 1W. The saturation voltage (Vce Sat) is a maximum of 370mV at 300mA collector current and 3A base current. The collector cutoff current (Icbo) is a maximum of 100nA. Operating temperature range is up to 150°C (TJ). This component is housed in an 8-SOIC package and is supplied on tape and reel. It finds application in power management and general-purpose switching circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 8-SO |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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