PMEM4020APD,115
TRANS PNP 40V 0.75A SC74Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number PMEM4020APD-115, is a silicon PNP transistor with an integrated isolated diode. This component is designed for surface mount applications within the SC-74 (SOT-457) package. It features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current (Ic) of 750mA. The device offers a high DC current gain (hFE) of 250 at 500mA and 5V, with a transition frequency (fT) of 150MHz. Power dissipation is rated at 500mW, and it operates effectively at junction temperatures up to 150°C. The PMEM4020APD-115 is utilized in various industrial applications, including consumer electronics and communication systems, where precise switching and amplification are required. This component is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 530mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SC-74 |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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