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PMEM1505PG,115

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PMEM1505PG,115

TRANS PNP 15V 0.5A 5TSSOP

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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The NXP USA Inc. PMEM1505PG-115 is a PNP bipolar junction transistor featuring an integrated isolated diode. This device operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 500mA, with a low collector cutoff current of 100nA (ICBO). It exhibits a minimum DC current gain (hFE) of 150 at 100mA and 2V. The transistor offers a transition frequency of 280MHz and a maximum power dissipation of 300mW. It is housed in a compact 5-TSSOP package, suitable for surface mounting and supplied on tape and reel. The Vce(sat) is specified at 250mV at 50mA base current and 500mA collector current, with an operating junction temperature up to 125°C. This component is utilized across industrial and consumer electronics applications requiring precise signal amplification and switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-TSSOP, SC-70-5, SOT-353
Mounting TypeSurface Mount
Transistor TypePNP + Diode (Isolated)
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100mA, 2V
Frequency - Transition280MHz
Supplier Device Package5-TSSOP
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max300 mW

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