PMBT5401,235
TRANS PNP 150V 0.3A SOT23Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. PMBT5401-235 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount device, packaged in a SOT-23 (TO-236AB) configuration, offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of up to 300 mA. With a maximum power dissipation of 250 mW and a transition frequency of 300 MHz, it is suitable for operation across a wide temperature range up to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 10 mA and 5 V, and a Vce saturation of 500 mV at 5 mA and 50 mA. The device is supplied on tape and reel for automated assembly. Its robust specifications make it a viable component in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 250 mW |
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