PH2369,112
TRANS NPN 15V 0.2A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PH2369-112 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current capability of 200 mA and a collector-emitter breakdown voltage of 15 V. With a transition frequency of 500 MHz and a maximum power dissipation of 500 mW, it is suitable for use in various electronic circuits. The device exhibits a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage. Its saturation voltage (Vce) is a maximum of 250 mV at 1 mA base current and 10 mA collector current. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, it is ideal for printed circuit board assembly. Operating temperature range extends to 150°C (TJ). This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
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